No. 07
通过微腔中色心的纳米级定位实现硅基明亮纯净单光子源Bright and pure single-photon source in silicon by nanoscale positioning of a color center in a microcavity
集成光子
在圆形布拉格光栅微腔中纳米级定位单个 W 色心,制成 1217 nm 全硅单光子源,饱和计数率达 1.29×10^6 counts/s,g^(2)(0)=0.06±0.02,脉冲激发下纯度 93%±2%。
硅是光子量子技术的主要材料平台。然而,在近红外波段高效集成高性能单光子源仍是一项关键挑战。在此,我们展示了一个波长为 1217 nm 的全硅单光子源,它通过将单个 W 色心纳米级定位在圆形布拉格光栅腔中制备而成。工作波长对应于被腔增强的 W 色心零声子线。在带隙以上连续波激发下,我们获得了 1.29×10^6 counts/s 的饱和光子计数率,并伴有显著的光子反聚束(g^(2)(0)=0.06±0.02)。在弱脉冲激发下进行触发操作,产生的单光子纯度为 93±2%。在饱和条件下,我们揭示了由再抽运过程引起的纯度下降,未来可利用选择性激发方案加以缓解。这些结果代表着向硅光子学中按需不可区分单光子源迈出的重要一步。
Abstract (English)
Silicon is a leading material platform for photonic quantum technologies. However, a key challenge remains the efficient integration of high-performance single-photon sources in the near infrared. Here we present an all-silicon single-photon source at 1217 nm wavelength, fabricated by nanoscale positioning of a single W center in a circular Bragg grating cavity. The operation wavelength corresponds to the W center’s zero-phonon line that is enhanced by the cavity. Under above-gap continuous-wave excitation, we obtain a saturated photon count rate of 1.29 × 10 6 counts/s with pronounced photon antibunching ( g (2) (0) = 0.06 ± 0.02). Triggered operation under weak pulsed excitation produces single photons with 93 ± 2% purity. At saturation, we reveal purity degradation due to repumping processes, that could be mitigated using selective excitation schemes in the future. These results represent a major step towards on-demand sources of indistinguishable single photons in silicon photonics.
Baptiste Lefaucher, Yoann Baron, Jean-Baptiste Jager, Vincent Calvo, Christian Elsässer, Giuliano Coppola, Frédéric Mazen, Sébastien Kerdilès, Félix Cache, Anaïs Dréau, Jean-Michel Gérard
Nat. Commun. (2026)
10.1038/s41467-026-78809-x
No. 08
面向可见光量子光子电路的超低损耗压电光机低限制氮化硅平台Ultra-low loss piezo-optomechanical low-confinement silicon nitride platform for visible wavelength quantum photonic circuits
集成光子
把压电光机驱动与 CMOS 代工的低限制氮化硅平台结合,在 780 nm 实现 2.6 dB/m 传输损耗、兆赫兹调制带宽与可忽略迟滞,并演示了深度可重构的可见光量子光子线路。
实现规模化光子量子计算需要把超低损耗与快速、低功耗、低迟滞、低串扰的可重构性结合起来的集成电路。这些要求在可见光波段尤其具有挑战性,因为许多量子资源态发生器(包括单光子源与量子存储器)天然工作在可见光波段。低限制氮化硅波导提供了所需的损耗性能,但传统热光调制器耗散显著的静态功率,导致热串扰并排除低温运行的可能。可见光波段的压电光机线路避免了这些缺点,但已有的演示要么依赖传输损耗为 35–100 dB/m 的高限制波导,要么依赖使用与代工不兼容的锆钛酸铅(PZT)的低限制平台。这里我们把压电光机驱动与 CMOS 代工制造的低限制氮化硅平台相结合,在 780 nm 处实现 2.6 dB/m 的传输损耗、兆赫兹量级的调制带宽、2.8 V·m 的半波电压–长度积以及可忽略的迟滞。我们演示了每个螺旋相移器损耗为 0.63 dB 的可重构马赫–曾德尔干涉仪,从而实现深度、可主动重构的可见光波段量子光子线路。
Abstract (English)
Realizing photonic quantum computing at scale requires integrated circuits that combine ultra-low loss with fast, low-power, low-hysteresis, and low-crosstalk reconfiguration. These requirements are particularly challenging at visible wavelengths, where many quantum resource-state generators, including single-photon sources and quantum memories, naturally operate. Low-confinement silicon nitride waveguides offer the requisite loss performance, but conventional thermo-optic modulators dissipate significant static power, driving thermal crosstalk and precluding cryogenic operation. Visible-wavelength piezo-optomechanical circuits avoid these drawbacks, but existing demonstrations rely either on high-confinement waveguides with propagation losses of 35-100 dB/m, or on low-confinement platforms using foundry-incompatible lead zirconate titanate (PZT). Here we combine piezo-optomechanical actuation with a CMOS-foundry-fabricated, low-confinement silicon nitride platform, achieving 2.6 dB/m propagation loss at 780 nm, megahertz-scale modulation bandwidth, a half-wave voltage-length product of 2.8 V ⋅ m, and negligible hysteresis. We demonstrate reconfigurable Mach-Zehnder interferometers with 0.63 dB loss per spiral phase shifter, enabling deep, actively reconfigurable visible-wavelength quantum photonic circuits.
Mayank Mishra, Gwangho Choi, Wenhua He, Gina M. Talcott, Katherine Kearney, Michael Gehl, Andrew Leenheer, Daniel Dominguez, Nils T. Otterstrom, Matt Eichenfield
Nat. Commun. (2026)
10.1038/s41467-026-77969-0